 |
ISBN
| 9789813200241 | |
DDC
| 621.38 | |
Tác giả CN
| Liang, Yung C. | |
Nhan đề
| Power microelectronics : device and process technologies / Yung C. Liang, Ganesh S. Samudra, Chih-Fang Huang | |
Lần xuất bản
| 2nd ed. | |
Thông tin xuất bản
| New Jersey : World Scientific, 2017 | |
Mô tả vật lý
| xvi, 591 pages. ; 24 cm. | |
Tóm tắt
| This is an excellent reference book for graduates or undergraduates studying semiconductor technology, or for working professionals who need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.' IEEE Electrical Insulation Magazine This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects | |
Từ khóa tự do
| Device fabrication | |
Từ khóa tự do
| Integrated circuit processing | |
Từ khóa tự do
| Microelectronics technology | |
Từ khóa tự do
| Power microelectronics | |
Từ khóa tự do
| Power semiconductor devices | |
Khoa
| Khoa Cơ khí - Điện - Điện tử - Ô tô | |
Tác giả(bs) CN
| Huang, Chih-Fang | |
Tác giả(bs) CN
| Samudra, Ganesh S. | |
Địa chỉ
| 300Q12_Kho Mượn_02(1): 100204 |
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| 100 | |aLiang, Yung C. |
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| 245 | |aPower microelectronics : |bdevice and process technologies / |cYung C. Liang, Ganesh S. Samudra, Chih-Fang Huang |
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| 250 | |a2nd ed. |
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| 260 | |aNew Jersey : |bWorld Scientific, |c2017 |
|---|
| 300 | |axvi, 591 pages. ; |c24 cm. |
|---|
| 520 | |aThis is an excellent reference book for graduates or undergraduates studying semiconductor technology, or for working professionals who need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.' IEEE Electrical Insulation Magazine This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects |
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| 541 | |aTặng |
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| 653 | |aDevice fabrication |
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| 653 | |aIntegrated circuit processing |
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| 653 | |aMicroelectronics technology |
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| 653 | |aPower microelectronics |
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| 653 | |aPower semiconductor devices |
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| 690 | |aKhoa Cơ khí - Điện - Điện tử - Ô tô |
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| 691 | |aKỹ thuật Điện - Điện tử |
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| 700 | |aHuang, Chih-Fang |
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| 700 | |aSamudra, Ganesh S. |
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| 852 | |a300|bQ12_Kho Mượn_02|j(1): 100204 |
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| 890 | |a1|b0|c0|d0 |
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